Epi III/V

Growth of III/V semiconductors. InP, GaAs, GaSb, InAs. This is done by Vapour Phase Epitaxy (VPE) at reduced pressure which is used to create thin films of different III/V semiconductors that is used different optical components.

Two different systems exists:

• Metal-organic VPE (MOVPE) that is using metal-organic group-III sources
• Hydride VPE (HVPE) that is using ultra clean metal group-III sources

Aixtron MOVPE reactor (left) and close-up of handling (right)

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