ALD deposition of Al2O3 or TiN
Equipment
BENEQ TFS 200
Specifications
| Film |
Temperature [°C] |
nm/cycle |
Cycle time [s] |
Dep rate [nm/min] |
| Al2O3 |
200 |
0.11 |
1.5 |
4.4 |
| TiN |
350 |
0.024 |
2.65 |
0.55 |
Typical time to process one wafer is 2 hours + deposition time
Restrictions & Requirements
- Substrate size (max.): 200 mm
- Substrate size (min.): pieces
- Other substrate restrictions: Material on the wafer/piece needs to tolerate the deposition temperature
- Batch processing: No
- Carrier substrate allowed: No
- Manual load/Carrier load: Manual loading