Realize your nano vision

Dry etching

Dry Etching

Dry etching, i.e., etching under vacuum with reactive gases, is used to remove material and to create the wanted topography. Our precision dry etching tools feature state-of-the-art processes with end point detection. We have the appropriate processes for conventional structures in Si, and compound semiconductor materials, for deep Si structures, and for meals and dielectrics.
Click on heading to sort the table.
(Extract from LIMS)

DetailsP5000 RIE/PECVD clusterApplied MaterialsPrecision 5000 Mark II (Dielectric, MxP, CVD)
DetailsEsaOxford Plasma SystemPlasmalab80Plus (Oxford RIE System) Chamber B
DetailsFabioOxford InstrumentICP380 Etch System
DetailsGallusOxford InstrumentICP380 Etch System (GaAs & InP)
DetailsTeplaTePla300 (Microwave Plasma Asher)
DetailsPlasmatvätt PicoDiener PICO RFLow pressure plasma etcher
DetailsRIEPlasmalab System 100RIE of thin films (Si3N4 & SiO2)
DetailsArielOxford Plasma TechnologyPlasmalab80Plus (Oxford RIE System)
DetailsRIE ICP O2/AR AlbanovaOxfordPlasmalab 80+
DetailsCryo RIE AlbanovaOxfordPlasmalab 100
DetailsOrbis, Vapor HF etchmemsstarOrbis Alpha
DetailsCobra ICP-RIE AlbanovaOxford InstrumentsPlasmapro 100 Cobra 300
DetailsAJA ion beam etching AlbanovaAJA international Inc.AJA ion miller


2020-06-30 Quality group (P)