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Lithography is a photographic method to define the lateral device structures, by exposing a thin polymer (i.e., photoresist) through a mask or by using a focused beam or a stamp. The line width is defined by the exposure tool.
A line width of 1 µm is routinely obtained by mask aligners, and i-line and g-line steppers offer linewidths of down to 0.5 µm and an alignment accuracy of 90 nm. Nanoimprint lithography reach linewidths of down to 60 nm, while the more complex process of Sidewall transfer lithography produce linewidths in the 10 - 100 nm range reproducibly.
Here we present the exposure tools together with the necessary additional tools, e.g., resist spinners and developers, hot plates and bake ovens.
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(Extract from LIMS)
DetailsGammaSuss MicrotecGamma 4M
DetailsBake 7NaberthermRamp able
DetailsFH APL-gulPM PlastDragskåp
DetailsKarl SussKarl SussMask aligner MA8/BA8
DetailsEmmaKarl SussMA6/BA6
DetailsBake 2Bake oven DespatchPre and postprocessing of samples
DetailsBake 3Bake oven MemmertPre and postprocessing of samples
DetailsMasktvättUltra t Equipment Company, Inc.SCS 124
DetailsAPL-HMDSYES-5E Vacuum Bake / Vapour Prime Processing System
DetailsHMDS 2IMTECStar 2000 (HMDS)
DetailsFH Gul3PM PlastDragskåp
DetailsALS-stepperGCA/UltratechALS 2035 G-line
DetailsBake 4MemmertU 26
DetailsBake 6DespatchOven
DetailsMaximusSSEMaximus 804
DetailsEbeam litho AlbanovaRaith GmbHRaith Voyager
DetailsMLA150 AlbanovaHeidelberg Instruments GmbHMLA150
DetailsNSR i-line stepperNikonTFHi12
DetailsSmartPrint Maskless Litho AlbanovaSmartForce TechnologiesSmartPrint
DetailsLabspin80Suss MicrotecLabspin8-BM
DetailsBeamer computer AlbanovaGeniSys GmbHVersion 5.90
DetailsULVAC photoresist stripperULVACENVIRO-1Xa
DetailsLabspin 82Suss MicrotecLabspin8 BM


2020-06-30 Quality group (P)