The process allows depositing nitride with a good uniformity. Recipe tuning is also possible.
Equipment
Applied Materials Precision 5000 Mark II – PECVD
Specifications
| Film |
Deposition rate [nm/min] |
Uniformity |
| Si3N4 |
611 |
±0,4% |
Etch Rate in 5% HF is ∼20 nm/min (∼1x Thermal oxide)
Restrictions & Requirements
- Substrate size (max.): 4in
- Substrate size (min.): N/A, sample allowed but require carrier
- Other substrate restrictions: N/A
- Batch processing: Single wafer processing
- Carrier substrate allowed: Yes
- Manual load/Carrier load: Automatic loading/handling of 25 wafers