Growing silicon dioxide films with O2, H2O or N2O
Possible to incorporate Cl in oxide film
Temperature anneal of silicon
T4: H2 anneal of metal systems
Equipment
T1 - Oxide 1250C (485)
T2 - Oxide 1250C (486)
T3 - Gate ox (487)
T4 - FGA (488)
Specifications
T1
- Thermal oxidation of silicon (dry and wet), Diffusion
- Temperature: 625 - 1250 °C
- Gases: N2, O2, H2 (to make H2O), N2O and DCE (C2H2CI2)
T2
-
- Thermal oxidation of silicon (dry and wet), Diffusion
- Temperature: 625 - 1250 °C
- Gases: N2, O2, H2 (to make H2O), N2O and DCE (C2H2CI2)
T3
- Gate oxidation of silicon (dry), Diffusion
- Temperature: 625 - 1150 °C
- Gases: N2, O2 and DCE (C2H2CI2)
T4
- Forming gas anneal (FGA),
- Temperature: 300 - 450 °C
- Gases: N2 and H2
Restrictions & Requirements
- Substrate size (max.): 200 mm
- Substrate size (min.): 4” and pieces
- Other substrate restrictions:
- Silicon (Si, SiC) materials allowed
- T1, T2, T3: no metals, no polymers
- T4: No gold, no polymers
- Batch processing: Yes
- Carrier substrate allowed: No
- Manual load/Carrier load: Manual load