Epitaxial deposition of III/V-based compounds and quantum-confined structures
Equipment
Aixtron 200/4 MOVPE
Specifications
Horizontal reactor with gasfoil rotation.
- (InGaAl)/(AsPSbN) compounds
- Si, Te, Sn, Zn, C doping
- Growth temperature up to 750 C
Restrictions & Requirements
- Substrate size (max.): 2 inch (3 or 4 inch possible after reconfiguration)
- Substrate size (min.): Small pieces possible
- Other substrate restrictions:
- Batch processing: No
- Carrier substrate allowed (Y/N):
- Manual load/Carrier load: